Highly efficient all-optical switching of magnetization in GdFeCo microstructures by interference-enhanced absorption of light

New Paper On All-Optical Switching from Radboud University, Nijmegen

The latest installment in the story of all-optical switching (AOS) was published last week in the APS journal, Physical Review B: Rapid Communications by Savoni et al. These latest results compare experiments with theory and investigate the switching efficiency of GdFeCo microstructures of different sizes. Using magnetization-sensitive microscopy the dynamics of the different microstructures were studied.

The results show that smaller structures require less energy to induce switching, an important realization for any potential technology. Results show a large decrease in the required energy density, around 60% of that required to switch the thin film equivalent. Savioni et al. predict that as little as 10fJ might be required to switchg a 20 x 20 nm2. Such an energy would be a few orders of magnitude smaller than that used in current magnetoresistive random access memory (MRAM) technology, and even compares favourably with the low energy requirements for magnetic semiconductor switching.

The full details can be found at the APS website via the link here.

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